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IRF7201TRPBF
MOSFET, Power,N-Ch,VDSS 30V,RDS(ON) 0.03Ohm,ID 7.3A,SO-8,PD 2.5W,VGS +/-20V,-55C | Infineon IRF7201TRPBF
Availability: In Stock
Package Type: SOIC-8
CAD Models: Footprint
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| Verification | Issues | Specs | Pricing |
Specifications for the IRF7201TRPBF
| Part Name | IRF7201TRPBF |
| Manufacturer | Infineon Technologies |
| Category | Electronic Components |
| Product Link | https://www.infineon.com/cms/en/product/power/mosfet/12v-300v-n-channel-power-mosfet/irf7201/ |
| RoHS | True |
| Life Cycle Status | Obsolete |
| Formats Available for Symbols and Footprints |
Altium, Eagle, KiCAD, Cadence OrCad/Allegro, PADS, DxDesigner, PCB123, Pulsonix, Proteus |
| Datasheet | See Datasheet PDF |
| Maximum Continuous Drain Current (A) | 7.3 A |
| Transistor Material | Si |
| Width | 4 (mm) |
| Transistor Configuration | Single |
| Maximum Drain Source Voltage (V) | 30 V |
| Maximum Gate Threshold Voltage (V) | 1 (V) |
| Package Type | SOIC |
| Number Of Elements Per Chip | 1 |
| Minimum Gate Threshold Voltage (V) | 1 (V) |
| Maximum Operating Temperature | +150 °C |
| Channel Type | N |
| Length | 5 (mm) |
| Typical Gate Charge Vgs | 19 nC @ 10 V |
| Pin Count | 8 |
| Mounting Type | Surface Mount |
| Channel Mode | Enhancement |
| Maximum Power Dissipation | 2.5 W |
| Series | HEXFET |
| Maximum Gate Source Voltage (V) | -20 V, +20 V |
| Height | 1.5 (mm) |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage (V) | 1.2 (V) |
| Maximum Drain Source Resistance | 50 mΩ |
Inventory for the IRF7201TRPBF by Infineon from major distributors.
| Supplier | Quantity | Price | Purchase | |
|---|---|---|---|---|
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★ Featured
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|
Visit Site | |
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★ Featured
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3,250
|
425 x $0.71
|
Visit Site | |
| Chip One Stop |
10
|
1 x $0.98
|
Visit Site | |
| Rutronik |
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Visit Site | |
| element14 Singapore |
2
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|
Visit Site |
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